www.DataSheet4U.com
PD-96959A
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiat...
www.DataSheet4U.com
PD-96959A
RADIATION HARDENED POWER
MOSFET SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67164 100K Rads (Si) IRHNA63164 300K Rads (Si) RDS(on) 0.018Ω 0.018Ω ID 56A* 56A*
IRHNA67164 150V, N-CHANNEL
TECHNOLOGY
SMD-2
International Rectifier’s R6 technology provides superior power
MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of
MOSFETs such as
voltage control, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Pea...