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PD - 91701B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radia...
www.datasheet4u.com
PD - 91701B
RADIATION HARDENED POWER
MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014Ω 0.014Ω 0.014Ω 0.014Ω ID 35*A 35*A 35*A 35*A
IRHM7Z60 30V, N-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
™ ®
TO-254AA
International Rectifier’s RAD-Hard ogy provides high performance power
MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of
MOSFETs such as
voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® technol-
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse A...