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PD - 91332D
RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA)
Product Summary
Part Number IRHM...
www.datasheet4u.com
PD - 91332D
RADIATION HARDENED POWER
MOSFET THRU-HOLE ( T0-254AA)
Product Summary
Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A
REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY
IRHM7260 JANSR2N7433 200V, N-CHANNEL
QPL Part Number JANSR2N7433 JANSF2N7433 JANSG2N7433 JANSH2N7433
TO-254AA
International Rectifiers RADHard HEXFET® technology provides high performance power
MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of
MOSFETs such as
voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
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Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed D...