IRHE93230

PD - 91804D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A IRHE9230 200V, P-CHANNEL REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7390U JANSF2N7390U International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.com DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. LCC - 18 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-So...