PD - 90881C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE9130...
PD - 90881C
RADIATION HARDENED POWER
MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE9130 100K Rads (Si) IRHE93130 300K Rads (Si) RDS(on) 0.30 Ω 0.30 Ω ID -6.5A -6.5A
IRHE9130 100V, P-CHANNEL
REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET
MOSFET TECHNOLOGY
QPL Part Number JANSR2N7389U JANSF2N7389U
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance power
MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.com DC converters and motor control. These devices retain all of the well established advantages of
MOSFETs such as
voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
LCC - 18
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-So...