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IRGPH50M Datasheet

Part Number IRGPH50M
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPH50M DatasheetIRGPH50M Datasheet (PDF)

Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15V, I C = 23A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi.

  IRGPH50M   IRGPH50M






Part Number IRGPH50U
Manufacturers International Rectifier
Logo International Rectifier
Description (IRGxxxx) Discrete IGBTs
Datasheet IRGPH50M DatasheetIRGPH50U Datasheet (PDF)

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  IRGPH50M   IRGPH50M







Part Number IRGPH50S
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPH50M DatasheetIRGPH50S Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.760 IRGPH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 1200V VCE(sat) ≤ 2.0V @VGE = 15V, IC = 33A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparabl.

  IRGPH50M   IRGPH50M







Part Number IRGPH50MD2
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPH50M DatasheetIRGPH50MD2 Datasheet (PDF)

Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 2.9V G @VGE = 15V, I C = 23A E n-channel Description .

  IRGPH50M   IRGPH50M







Part Number IRGPH50FD2
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPH50M DatasheetIRGPH50FD2 Datasheet (PDF)

Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 1200V VCE(sat) ≤ 2.9V G @VGE = 15V, IC = 25A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's.

  IRGPH50M   IRGPH50M







INSULATED GATE BIPOLAR TRANSISTOR

Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15V, I C = 23A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 42 23 84 84 10 ±20 20 200 78 -55 to +150 300 (0.063.


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