IRGP4068D-EPbF

www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI C GC E TO-247AC IRGP4068DPbF E GC TO-247AD IRGP4068D-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 160°C IFSM IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Max. 600 96 48 192 192 Units V c d d A Diode Continous Forward Current Diode Non Repetitive Peak Surge Current @ TJ = 25°C Diode Peak Repetitive Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltag...