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IRGP20B120U-E
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Non Punch Through (NPT) Technology 10 µs Short Circuit capability Square RBSOA Positive VCE(on) Temperature Coefficient Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits Benchmark efficiency above ...
IRF
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