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PD -90825A
IRGMVC50U
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
Features
• • • ...
www.DataSheet4U.com
PD -90825A
IRGMVC50U
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
Features
Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 3.0V
@VGE = 15V, IC = 27A
Description
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Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-
voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown
Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter
Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
TO-258AA
Max.
600 45* 27 220 180 ±20 200 80 -55 to + 150 300 (0.063in./1.6mm from ca...