IRGMC30U

www.DataSheet4U.com PD -90715B IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation > 10 kHz Switching-loss rating includes all "tail" losses C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 8.0A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max. 600 17 8.0 68 68 ± 20 75 30 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) Units V A V W °C g ...