IRG4PH40U

PD - 91612C IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations Optimized for power conversion; SMPS, UPS and welding Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-channel Benefits Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 41 21 82 82 ± 20 270 160 65 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 ...