IRG4PC60U

www.DataSheet4U.com PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6V @VGE = 15V, IC = 40A n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Designed for best performance when used with IR Hexfred & IR Fred companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 75 40 300 300 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ---0.24 ---6 (0.21) Max. 0.24 ---40 ---- Units °C/W g...