www.DataSheet4U.com
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium opera...
www.DataSheet4U.com
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package.
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.50V
@VGE = 15V, IC = 60A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed for best performance when used with IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown
Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter
Voltage Reverse
Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 90 60 120 120 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.24 ––– 6 (0.21)
Max.
0.24 ––– 40 –––
Units
°C/W g (oz)
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