IRG4MC50U

www.DataSheet4U.com PD -94273A IRG4MC50U INSULATED GATE BIPOLAR TRANSISTOR Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C UltraFast Speed IGBT VCES = 600V G E VCE(on) max = 2.25V @VGE = 15V, IC = 27A n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max. 600 35* 27 140 140 ± 20 150 60 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) Units V A V W °C g...