PD- 91836A
IRG4CC50WB
IRG4CC50WB IGBT Die in Wafer Form
C
600 V Size 5
WARP Speed
G E
6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage ...
