PD -95891
IRG4BH20K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor c...
PD -95891
IRG4BH20K-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V
Combines low conduction losses with high switching speed
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Industry standard D2Pak package Lead-Free
C
G E
n-channel
Short Circuit Rated UltraFast IGBT
VCES = 1200V VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
Benefits
As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
Latest generation 4 IGBT's offer highest power density motor controls possible
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter
Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter
Voltage Reverse
Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Thermal Resistance
RθJC RθCS RθJA Wt
www.irf.com
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
D2Pak
Max. 1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150
Units V
A
µs V mJ W
°C
Typ. ––– 0.24 ––– 6 (0.21)
M...