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IRG4BC20F Datasheet

Part Number IRG4BC20F
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20F Datasheet (PDF)

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for spec.

  IRG4BC20F   IRG4BC20F






Part Number IRG4BC20W-S
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20W-S Datasheet (PDF)

PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A N-chan.

  IRG4BC20F   IRG4BC20F







Part Number IRG4BC20W
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20W Datasheet (PDF)

PD 91652B IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A n-channel.

  IRG4BC20F   IRG4BC20F







Part Number IRG4BC20UPbF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20UPbF Datasheet (PDF)

PD - 95445A IRG4BC20UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free C G E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • De.

  IRG4BC20F   IRG4BC20F







Part Number IRG4BC20UD-SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20UD-SPBF Datasheet (PDF)

PD- 95565A IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package • L.

  IRG4BC20F   IRG4BC20F







Part Number IRG4BC20UD-S
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRG4BC20F DatasheetIRG4BC20UD-S Datasheet (PDF)

PD- 94077 IRG4BC20UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package C UltraFast CoPack IGBT VCES .

  IRG4BC20F   IRG4BC20F







INSULATED GATE BIPOLAR TRANSISTOR

PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 16 9.0 64 64 ± 20 5.0 60 24 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.5 ––– 2.0 (0.07) Max. 2.1 ––– 80 ––– Units °C/W g (oz.


2005-08-23 : TDA1600    TDA1602A    SAB8032A    ADC2300    APU2470    LS202    ICX208AKB    ICX208AK    ICX206AKB    ICX207AKB   


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