IRG41BC30UD

PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outline C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-cha nn el Benefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 17 8.9 92 92 8.5 92 2500 ± 20 45 18 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGB...