PD - 94193
POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on)
IRFY440 IRFY440M
0.85 Ω 0.85 Ω
ID...
PD - 94193
POWER
MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on)
IRFY440 IRFY440M
0.85 Ω 0.85 Ω
ID 7.0A 7.0A
Eyelets Glass Glass
IRFY440,IRFY440M 500V, N-CHANNEL
HEXFET®
MOSFET TECHNOLOGY
HEXFET®
MOSFET technology is the key to International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of
MOSFETs, such as
voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
TO-257AA
Features:
n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Glass Eyelets n For Space Level Applications
Refer to Ceramic Version Part Numbers IRFY440C, IRFY440CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Fac...