Provisional Data Sheet No. PD 9.1287B
HEXFET® POWER MOSFET
www.DataSheet4U.com
IRFY140CM
N-CHANNEL
100 Volt, 0.077 Ω...
Provisional Data Sheet No. PD 9.1287B
HEXFET® POWER
MOSFET
www.DataSheet4U.com
IRFY140CM
N-CHANNEL
100 Volt, 0.077 Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power
MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of
MOSFETs, such as
voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY140CM BVDSS 100V RDS(on) 0.077Ω ID 16*A
Features
n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS=10V, TC = 25°C ID @ VGS=10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalance Energy Avalance Current RepetitiveAvalanche E...