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IRFUC20
N-Channel MOSFET
Description
iscN-Channel
MOSFET
Transistor IRFUC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =4.4Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching
Voltage
Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P...
INCHANGE
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