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IRFU9214PBF Datasheet

Part Number IRFU9214PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET POWER MOSFET
Datasheet IRFU9214PBF DatasheetIRFU9214PBF Datasheet (PDF)

www.DataSheet4U.com PD - 95375A IRFR/U9214PbF P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0Ω D G S ID = -2.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

  IRFU9214PBF   IRFU9214PBF






HEXFET POWER MOSFET

www.DataSheet4U.com PD - 95375A IRFR/U9214PbF P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0Ω D G S ID = -2.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak TO-252AA I-Pak TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -2.7 -1.7 -11 50 0.40 ± 20 100 -2.7 5.0 -5.0 -55 to + .


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