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IRFU430A Datasheet

Part Number IRFU430A
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFU430A DatasheetIRFU430A Datasheet (PDF)

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effec.

  IRFU430A   IRFU430A






Part Number IRFU430A
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFU430A DatasheetIRFU430A Datasheet (PDF)

www.DataSheet4U.com PD - 94356A SMPS MOSFET IRFR430A IRFU430A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS 500V RDS(on) max 1.7Ω ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR430A I-Pak IRFU430A Abs.

  IRFU430A   IRFU430A







Part Number IRFU430A
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFU430A DatasheetIRFU430A Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-.

  IRFU430A   IRFU430A







Power MOSFET

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR430A-GE3 Lead (Pb)-free IRFR430APbF Note a. See device orientation DPAK (TO-252) SiHFR430ATR-GE3 a IRFR430ATRPbFa DPAK (TO-252) SiHFR430ATRL-GE3 a IRFR430ATRLPbFa DPAK (TO-252) SiHFR430ATRR-GE3 a - IPAK (TO-251) SiHFU430A-GE3 IRFU430APbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junc.


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