PD - 95953A
IRFR2607ZPbF IRFU2607ZPbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operatin...
PD - 95953A
IRFR2607ZPbF IRFU2607ZPbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
G
HEXFET® Power
MOSFET
D
VDSS = 75V
RDS(on) = 22mΩ
Description
This HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S ID = 42A
D-Pak
I-Pak
IRFR2607ZPbF IRFU2607ZPbF
Absolute Maximum Ratings
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 45 32 42 180 110
Units A
W
Linear Derating Factor
VGS Gate-to-Source
Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
0.72 ± 20 96 96 See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C V mJ
A mJ
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm ...