INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS640A
FEATURES ·Avalanche Rugged T...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRFS640A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.) @ VDS = 200V
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
200 ±30
V V
9.8 A
72 A
43 W
-55~150 -55~150
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
MAX 2.89 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRFS640A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current IDSS Zero Gate
Voltage Drain Current VSD Forward On-
Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 4.9A
VGS= ±30V;VDS= 0 VDS= 200V; VGS= 0 VDS= 160V; VGS= 0; Tj= 12...