IRFS510A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175ΟC Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt O2 O1 O1 O3 Total Power Dissipation (TC=25 ΟC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8”from case for 5-seconds IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Value 100 4.5 3.2 20 +_ 20 54 4.5 2.1 6.5 21 0.14 - 55 to +175 300 Units V A A V mJ A mJ V/ns W W/ ΟC ΟC Thermal Resistance Symbol Rθ JC RθJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ. --- Max. 6.98 62.5 Units ΟC /W Rev. B IRFS510A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25ΟCunless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Vo...