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IRFS460 Datasheet

Part Number IRFS460
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRFS460 DatasheetIRFS460 Datasheet (PDF)

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltag.

  IRFS460   IRFS460






Part Number IRFS4620PBF
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel HEXFET Power MOSFET
Datasheet IRFS460 DatasheetIRFS4620PBF Datasheet (PDF)

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 200V 63.7m: 77.5m: 24A D S G G D S D2Pak IRFS4620PbF T.

  IRFS460   IRFS460







Part Number IRFS4620
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFS460 DatasheetIRFS4620 Datasheet (PDF)

Isc N-Channel MOSFET Transistor IRFS4620 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 24 17 10.

  IRFS460   IRFS460







Part Number IRFS4615PBF
Manufacturers International Rectifier
Logo International Rectifier
Description N-Channel HEXFET Power MOSFET
Datasheet IRFS460 DatasheetIRFS4615PBF Datasheet (PDF)

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID D 150V 34.5m: 42m: 33A D S G G D S D2Pak IRFS4615PbF TO.

  IRFS460   IRFS460







Part Number IRFS4615
Manufacturers INCHANGE
Logo INCHANGE
Description TO-262 N-Channel MOSFET
Datasheet IRFS460 DatasheetIRFS4615 Datasheet (PDF)

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 33 24 A IDM Drain Current-Single Pulse.

  IRFS460   IRFS460







Part Number IRFS4615
Manufacturers INCHANGE
Logo INCHANGE
Description TO-263 N-Channel MOSFET
Datasheet IRFS460 DatasheetIRFS4615 Datasheet (PDF)

Isc N-Channel MOSFET Transistor IRFS4615 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 33 24 14.

  IRFS460   IRFS460







Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds IRFS460 BVDSS = 500 V RDS(on) = 0.25Ω ID = 12.4 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Value 500 12.4 7.8 88 ±30 1708 12.4 10 3.5 100 0.8 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/°C °C Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.25 40 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS460 1&+$11(/ 32:(5 026)(7 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.


2016-08-03 : IRFS7530-7PPbF    IRFS7534-7PPbF    UPC1251C    C1251C    C1251    UPC1251    IRL640S    IRL640    IRL630    IRL630S   


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