IRFS4410

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96902A IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 8.0m: 10m: 96A G DS TO-220AB IRFB4410 G DS D2Pak IRFS4410 G DS TO-262 IRFSL4410 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery f TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Current c EAR Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RθJC Junction-to-Case k RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 k RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk www.irf.com Max. 96c 68c 380 250 1.6 ± 20 19 -55 to + 175 300 10lbxin (1.1Nxm) 220 See Fig. 14, 15, 16a, 16b Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units A W W/°C V V/ns °C...