PD - 97393
IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF
Features • Key parameters optimized for Class-D audio amplifie...
PD - 97393
IRFS4020PbF DIGITAL AUDIO
MOSFET IRFSL4020PbF
Features Key parameters optimized for Class-D audio amplifier applications Low RDSON for improved efficiency Low QG and QSW for better THD and improved
efficiency Low QRR for better THD and lower EMI 175°C operating junction temperature for
ruggedness Can deliver up to 300W per channel into 8Ω load in
Key Parameters
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ.
200 85 18 6.7
RG(int) typ. TJ max
3.2 175
D D
D
V mΩ
nC nC
Ω °C
half-bridge configuration amplifier
G
DS G
DS G
S
D2Pak IRFS4020PbF
TO-262 IRFSL4020PbF
GDS
Gate
Drain
Source
Description
This Digital Audio
MOSFET is specifically designed for Class-D audio amplifier applications. This
MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this
MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features combine to make this
MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
TJ TSTG
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @...