SMPS MOSFET
PD- 95537
IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS
150V
RDS(on) max
0.056Ω
ID
33A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB33N15D
D2Pak
TO-262
IRFS33N15D IRFSL33N15D
Absolute Maximum Ratings
ID.
Power MOSFET
SMPS MOSFET
PD- 95537
IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS
150V
RDS(on) max
0.056Ω
ID
33A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB33N15D
D2Pak
TO-262
IRFS33N15D IRFSL33N15D
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max. 33 24 130 3.8 170 1.1 ± 30 4.4
-55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A
W
W/°C V
V/ns
°C
Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter
Notes through are on page 11
www.irf.com
1
7/21/04
IRFB/IRFS/IRFSL33N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Curren.