Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
PD - 95706D
IRFB3307PbF IRFS3307PbF IRFSL3307PbF
HEXFET® Power
MOSFET
D VDSS RDS(on) typ.
75V
5.0m:
:G max. 6.3m
S ID
120A
GDS
TO-220AB IRFB3307PbF
GDS
D2Pak IRFS3307PbF
GDS
TO-262 IRFSL3307PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS TJ TSTG
Continuous Drain Current, VGS @ 10V
dContinuous Drain Current, VGS @ 10V
Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
Symbol RJC
Parameter
kJunction-to-Case
RCS RJA RJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
120l 84l
510
l200 l1.3
± 20 -55 to + 175
300
x x10lb in (1.1N m)
270 See Fig. 14, 15, 16a, 16b
Typ. ––– 0.50 ––– –––
Max.
l0.61
––– 62
40
Units A
W W/°C
V °C
mJ A mJ
Units °C/W
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