IRFS3207PBF

PD - 95708D www.DataSheet4U.com IRFB3207PbF IRFS3207PbF IRFSL3207PbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S VDSS RDS(on) typ. max. ID 75V 3.6m: 4.5m: 170A S D G TO-220AB IRFB3207PbF S D G D2Pak IRFS3207PbF S D G TO-262 IRFSL3207PbF Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d ™ 120™ 170 720 300 2.0 ± 20 5.8 -55 to + 175 300 10lb in (1.1N m) Max. Units A Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw W W/°C V V/ns °C f x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ù e 910 See Fig. 14, 15, 16a, 16b, mJ A mJ Repetitive Avalanche Energy g Thermal Resistance Symbol RθJC RθCS RθJA RθJA Junction-to-Case k Parameter Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface , TO-220 Junction-...