IRFS3004-7PPbF

PD - 97378A IRFS3004-7PPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 40V 0.90mΩ 1.25mΩ 400A 240A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free c S S G S S S S D2Pak 7 Pin G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 400™ 280™ 240 1610 380 Max. Units A d W W/°C V V/ns °C f 2.5 ± 20 2.0 -55 to + 175 300 290 See Fig. 14, 15, 22a, 22b Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Ãd e Thermal Resistance Symbol RθJC RθJA d j mJ A mJ Junction-to-Case Junction-to-Ambient (PCB Mount) kl Parameter Typ. ––– ––– Max. 0.40 40 Units °C/W www.ir...