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IRFR5505 Datasheet

Part Number IRFR5505
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFR5505 DatasheetIRFR5505 Datasheet (PDF)

PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi.

  IRFR5505   IRFR5505






Part Number IRFR5505PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFR5505 DatasheetIRFR5505PBF Datasheet (PDF)

• Lead-Free • Halogen-Free PD - 95077B IRFR5505PbF IRFU5505PbF 1 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 2 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 3 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 4 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 5 www.irf.com © 2012 International Rectifier November 12th , 2012 IRFR/U5505PbF 6 www.irf.com © 2012.

  IRFR5505   IRFR5505







HEXFET Power MOSFET

PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight www.DataSheet4U.com lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -18 -11 -64 57 0.4.


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