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IRFR48Z Datasheet

Part Number IRFR48Z
Manufacturers International Rectifier
Logo International Rectifier
Description AUTOMOTIVE MOSFET
Datasheet IRFR48Z DatasheetIRFR48Z Datasheet (PDF)

www.DataSheet4U.com PD - 96924 AUTOMOTIVE MOSFET IRFR48Z IRFU48Z HEXFET® Power MOSFET D Features Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l VDSS = 55V RDS(on) = 11mΩ Description G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design .

  IRFR48Z   IRFR48Z






Part Number IRFR48Z
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFR48Z DatasheetIRFR48Z Datasheet (PDF)

isc N-Channel MOSFET Transistor IRFR48Z, IIRFR48Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 62 IDM Drain Current-Single Pulsed 250 PD Total Dissipation @TC=25℃ 91 T.

  IRFR48Z   IRFR48Z







AUTOMOTIVE MOSFET

www.DataSheet4U.com PD - 96924 AUTOMOTIVE MOSFET IRFR48Z IRFU48Z HEXFET® Power MOSFET D Features Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l VDSS = 55V RDS(on) = 11mΩ Description G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications DataSheet4U.com and a wide variety of other applications. ID = 42A ee DataSh D-Pak IRFR48Z Max. 62 44 42 250 91 0.61 ± 20 W W/°C V mJ A mJ -55 to + 175 °C 300 (1.6mm from case ) 10 lbf in (1.1N m) A I-Pak IRFU48Z Units Absolute Maximum Ratings Parameter I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) Pulsed Drain Current I DM ™ P D @T C = 25°C Power Dissipation V GS E AS (Tested ) I AR E AR TJ T STG Linear Derating Factor Gate-to-Source Voltage E AS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current d Ù h 74 110 See Fig.12a, 12b, 15, 16 Repe.


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