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IRFR430B Datasheet

Part Number IRFR430B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 500V N-Channel MOSFET
Datasheet IRFR430B DatasheetIRFR430B Datasheet (PDF)

www.DataSheet4U.com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency .

  IRFR430B   IRFR430B






Part Number IRFR430APBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFR430B DatasheetIRFR430APBF Datasheet (PDF)

SMPS MOSFET PD -95076B Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Lead-Free l IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET VDSS 500V ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR430A I-Pak IRFU430A Absolut.

  IRFR430B   IRFR430B







Part Number IRFR430A
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFR430B DatasheetIRFR430A Datasheet (PDF)

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-.

  IRFR430B   IRFR430B







Part Number IRFR430A
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR430B DatasheetIRFR430A Datasheet (PDF)

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effec.

  IRFR430B   IRFR430B







Part Number IRFR430A
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFR430B DatasheetIRFR430A Datasheet (PDF)

www.DataSheet4U.com PD - 94356A SMPS MOSFET IRFR430A IRFU430A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS 500V RDS(on) max 1.7Ω ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR430A I-Pak IRFU430A Abs.

  IRFR430B   IRFR430B







500V N-Channel MOSFET

www.DataSheet4U.com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● D ◀ ▲ ● ● G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U.com ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR430B / IRFU430B 500 3.5 2.2 14 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 270 3.5 4.8 5.5 2.5 48 0.38 -55 to +150 300 TJ, Tstg TL - Der.


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