PD - 94452
HEXFET® Power MOSFET
l
IRFR3418 IRFU3418
ID
30A
Applications High frequency DC-DC converters
VDSS
80V
RD...
PD - 94452
HEXFET® Power
MOSFET
l
IRFR3418 IRFU3418
ID
30A
Applications High frequency DC-DC converters
VDSS
80V
RDS(on) Max
14m:
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche
Voltage and Current
l
D-Pak IRFR3418
I-Pak IRFU3418
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
80 ± 20 70 50 280 140 3.8 0.95 5.2 -55 to + 175
Units
V
h
A W
c
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
e
W/°C V/ns °C
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) * Junction-to-Ambient
Typ.
––– ––– –––
Max.
1.05 40 110
Units
°C/W
Notes through are on page 10
www.irf.com
1
09/12/02
IRFR/U3418
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold
Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source R...