IRFR3412

PD - 94373 SMPS MOSFET Applications Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability l IRFR3412 IRFU3412 HEXFET® Power MOSFET VDSS 100V RDS(on) max 0.025Ω ID 48A† D-Pak IRFR3412 I-Pak IRFU3412 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 second Mounting torqe, 6-32 or M3 screw Max. 48† 34† 190 140 0.95 ± 20 6.4 -55 to + 175 300(1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCurrent Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 48† 190 A ––– ––– 1.3 V „ ––– 68 100 ns ––– 160 240 nC ––– 4.5 6.8 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions MOSFET symbol showing the G integral reverse p-n junc...