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IRFR310B Datasheet

Part Number IRFR310B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 400V N-Channel MOSFET
Datasheet IRFR310B DatasheetIRFR310B Datasheet (PDF)

IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power sup.

  IRFR310B   IRFR310B






Part Number IRFR310A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRFR310B DatasheetIRFR310A Datasheet (PDF)

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) IRFR/U310A BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous D.

  IRFR310B   IRFR310B







Part Number IRFR310
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFR310B DatasheetIRFR310 Datasheet (PDF)

iscN-Channel MOSFET Transistor IRFR310 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1.7 A IDM D.

  IRFR310B   IRFR310B







Part Number IRFR310
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRFR310B DatasheetIRFR310 Datasheet (PDF)

$GYDQFHG 3RZHU 026)(7 IRFR310 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuo.

  IRFR310B   IRFR310B







Part Number IRFR310
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR310B DatasheetIRFR310 Datasheet (PDF)

www.vishay.com IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 3.6 12 1.9 6.5 Single FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR310, SiHFR310) • Straight lead (IRFU310, SiHFU310) • Available in tape and reel • Fast switching Available • Fully avalanche rate.

  IRFR310B   IRFR310B







400V N-Channel MOSFET

IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • • • • • • 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFR310B / IRFU310B 400 1.7 1.1 6.0 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 100 1.7 2.6 5.5 2.5 26 0.21 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead tempera.


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