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IRFR224A Datasheet

Part Number IRFR224A
Manufacturers Samsung
Logo Samsung
Description Power MOSFET
Datasheet IRFR224A DatasheetIRFR224A Datasheet (PDF)

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  IRFR224A   IRFR224A






Part Number IRFR224B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 250V N-Channel MOSFET
Datasheet IRFR224A DatasheetIRFR224B Datasheet (PDF)

IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC conve.

  IRFR224A   IRFR224A







Part Number IRFR224
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFR224A DatasheetIRFR224 Datasheet (PDF)

iscN-Channel MOSFET Transistor IRFR224 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.8 A IDM D.

  IRFR224A   IRFR224A







Part Number IRFR224
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power MOSFET
Datasheet IRFR224A DatasheetIRFR224 Datasheet (PDF)

$GYDQFHG 3RZHU 026)(7 IRFR224 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.742Ω (Typ.) BVDSS = 250 V RDS(on) = 1.1Ω ID = 3.8 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuo.

  IRFR224A   IRFR224A







Part Number IRFR224
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR224A DatasheetIRFR224 Datasheet (PDF)

www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categoriz.

  IRFR224A   IRFR224A







Power MOSFET

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2016-08-04 : LM1085-12-220M    LM1085-05-220M    LM1085-220M    LM1085    LM1085    MUR1660G    MUR1640G    MUR1620G    IRFP460PBF    IRFP243R   


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