IRFR120

IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Features 8.4A, 100V rDS(ON) = 0.270Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR120 IRFU120 PACKAGE TO-252AA TO-251AA BRAND IRFR120 IRFU120 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE JEDEC TO-252AA DRAIN (FLANGE) DRAIN DRAIN (FLANGE) SOURCE 4-377 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFR120, IRFU120 Absolute Maximum Ratings TC = 25oC, Unle...