Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
D
G S
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, .
Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
D
G S
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
G Gate
IR MOSFET StrongIRFET™
IRFP7718PbF
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max
ID (Silicon Limited) ID (Package Limited)
75V
1.45m 1.80m 355A
195A
D
G DS TO-247AC
D Drain
S Source
Base part number Package Type
IRFP7718PbF
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number IRFP7718PbF
RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A)
6 ID = 100A
4
TJ = 125°C 2
TJ = 25°C
0 4
8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
400 Limited By Package
300
200
100
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
1 2015-11-30
IRFP7718PbF
Absolute Maximium Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond L.