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IRFP4868PBF Datasheet

Part Number IRFP4868PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP4868PBF DatasheetIRFP4868PBF Datasheet (PDF)

  IRFP4868PbF VDSS RDS(on) typ. max. ID 300V 25.5m 32m 70A Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   IRFP4868PbF Package Type   TO-247AC   G Gate  D D Drain S D G T.

  IRFP4868PBF   IRFP4868PBF






Part Number IRFP4868PBF
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet IRFP4868PBF DatasheetIRFP4868PBF Datasheet (PDF)

  IRFP4868PbF VDSS RDS(on) typ. max. ID 300V 25.5m 32m 70A Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   IRFP4868PbF Package Type   TO-247AC   G Gate  D D Drain S D G T.

  IRFP4868PBF   IRFP4868PBF







Power MOSFET

  IRFP4868PbF VDSS RDS(on) typ. max. ID 300V 25.5m 32m 70A Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free Base Part Number   IRFP4868PbF Package Type   TO-247AC   G Gate  D D Drain S D G TO-247AC S Source Standard Pack Form Tube Quantity 25 Orderable Part Number   IRFP4868PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS TJ TSTG Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Thermal Resistance RJC RCS RJA Symbol Parameter Junction-to-Case  Case-to-Sink, Flat Greased Surface Junction-to-Ambient    Max. 70 49 280 517 3.4 ± 20 -55 to + 175 300 10lbfin (1.1Nm)    1093 See Fig. 14, 15, 22a, 22b   Typ. ––– 0.24 –––   Max. 0.29 ––– 40   Units A W W/°C V °C   mJ A mJ   Units °C/W 1 www.irf.com © 2012 Intern.


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