isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Stat...
isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS
Gate-Source
Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
450
V
±20
V
13
A
52
A
150
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 0.7 30
UNIT ℃/W ℃/W
IRFP451
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 7A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 450V; VGS= 0
VSD
Forward On-
Voltage
IS= 13A; VGS= 0
IRFP451
MIN MAX UNIT
450
V
2
4
V
0.4
Ω
±100 nA
250
μA
1...