N-Channel MOSFET Transistor
Description
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and...
Inchange Semiconductor
IRFP252 PDF File
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