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IRFP22N50A Datasheet

Part Number IRFP22N50A
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFP22N50A DatasheetIRFP22N50A Datasheet (PDF)

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 32 52 Single D FEATURES 500 0.23 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS • Switch Mode Power Supply (SMPS) G .

  IRFP22N50A   IRFP22N50A






Part Number IRFP22N50A
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFP22N50A DatasheetIRFP22N50A Datasheet (PDF)

iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM D.

  IRFP22N50A   IRFP22N50A







Part Number IRFP22N50A
Manufacturers International Rectifier
Logo International Rectifier
Description SMPS MOSFET
Datasheet IRFP22N50A DatasheetIRFP22N50A Datasheet (PDF)

PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V RDS(on) max 0.23Ω ID 22A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ.

  IRFP22N50A   IRFP22N50A







Power MOSFET

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 120 32 52 Single D FEATURES 500 0.23 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptable Power Supply • High Speed Power Switching S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES • Full Bridge Converters • Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 ± 30 22 14 88 2.2 1180 22 28 277 4.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width .


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