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IRFP150MPBF Datasheet

Part Number IRFP150MPBF
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFP150MPBF DatasheetIRFP150MPBF Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150MPBF Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Sou.

  IRFP150MPBF   IRFP150MPBF






Part Number IRFP150MPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP150MPBF DatasheetIRFP150MPBF Datasheet (PDF)

• Lead-Free PD - 96291 IRFP150MPbF Ω www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRFP150MPbF www.irf.com 5 IRFP150MPbF 6 www.irf.com IRFP150MPbF www.irf.com 7 IRFP150MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) @!! R @! !Y @ 6 9 G T@@ WD@XÃÅ7Å !‘ÃÃi! i# G "‘ÃÃi ‘Ã à 7 6à r !‘ G@69ÃUDQ 6 Å6Å 6! 7 Å6Å p 6 ‘ÃQ ‘Ã à 7 6à $ T UC@SH6GÃQ69 9 @ ‘Ã à 7 6à WD@X)ÃÅ6ÅÃÃÅ6Å WD@X).

  IRFP150MPBF   IRFP150MPBF







Part Number IRFP150MPBF
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IRFP150MPBF DatasheetIRFP150MPBF Datasheet (PDF)

Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide .

  IRFP150MPBF   IRFP150MPBF







N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150MPBF Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 100 V ±20 V 42 A 140 A 160 W -55~175 ℃ -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.95 40 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150MPBF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on)* Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VGS= 10V; ID= 23A VGS= ±20V;VDS= 0 VDS= 100V; VGS= 0,Tc= 25℃ VDS= 80V; VGS= 0,Tc= 150℃ VSD Forward On-Voltage *Pulse.


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