IRFL9110

www.vishay.com IRFL9110, SiHFL9110 Vishay Siliconix Power MOSFET S SOT-223 G D S D G D P-Channel MOSFET Marking code: FF PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 1.2 8.7 2.2 4.1 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location FEATURES Surface-mount Available in tape and reel Dynamic dv/dt rating Repetitive avalanche rated P-channel Fast switching Available Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. SOT-223 SiHFL9110TR-GE3 a IRFL9110TRPbF-BE3 a, b IRFL9110TRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current ...