PD - 94839
IRFIZ34EPbF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 0.042Ω
G S
ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...
