IRFIBE20G

iscN-Channel MOSFET Transistor IRFIBE20G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 5.6 A PD Total Dissipation @TC=25℃ 30 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.1 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFIBE20G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=0.84A 6.5 Ω IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=800V; VGS= 0V VDS=640V; VGS= 0V;TJ=125℃ Diode forward voltage IDR =1.4A, VGS = 0 V ±100 nA 100 500 uA 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ti...